The FDW2503N_Q is an N-channel MOSFET from Onsemi, packaged in a TSSOP package and available on tape and reel. It can handle a continuous drain current of 5.5A and has a drain to source breakdown voltage of 20V. The device has a drain to source resistance of 21mR and a gate to source voltage of 12V. The MOSFET is rated for operation between -55°C and 150°C.
PackageTSSOP
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi FDW2503N_Q technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDW2503N_Q Datasheet
Download the complete datasheet for Onsemi FDW2503N_Q to view detailed technical specifications.
No datasheet is available for this part.
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