The FDZ206P_Q is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of -13A. It features a drain to source resistance of 9.5mR and a power dissipation of 2.2W. The device is packaged in a BGA package and is suitable for operation over a temperature range of -55°C to 150°C.
PackageBGA
PolarityP-CHANNEL
Power2.2W
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Technical Specifications
Onsemi FDZ206P_Q technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | -13A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 9.5mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.2W |
| Turn-Off Delay Time | 115ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ206P_Q Datasheet
Download the complete datasheet for Onsemi FDZ206P_Q to view detailed technical specifications.
No datasheet is available for this part.