The FFB3906 PNP transistor has a collector base voltage rating of 40V, collector-emitter voltage of 40V, and emitter base voltage of 5V. It has a gain bandwidth product of 200MHz and a minimum current gain of 60. The transistor can handle a maximum collector current of 200mA and a maximum power dissipation of 300mW. It operates within a temperature range of -55°C to 150°C. The FFB3906 is packaged in tape and reel quantities of 3000.
Onsemi FFB3906_Q technical specifications.
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 60 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | FFB3906 |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FFB3906_Q to view detailed technical specifications.
No datasheet is available for this part.