The FJA4210RTU is a PNP transistor with a collector-emitter breakdown voltage of 140V and a maximum collector current of 10A. It has a maximum power dissipation of 100W and operates over a temperature range of -55°C to 150°C. The device is packaged in a through-hole package and is RoHS compliant. The transistor has a gain bandwidth product of 30MHz and a minimum current gain of 50.
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Onsemi FJA4210RTU technical specifications.
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 50 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJA4210RTU to view detailed technical specifications.
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