The FJA4310YTU is a high-power NPN transistor from Onsemi, featuring a collector base voltage of 200V and a collector-emitter voltage of 140V. It has a maximum collector current of 10A and a gain bandwidth product of 30MHz. The transistor operates within a temperature range of -55°C to 150°C and is packaged in a rail/Tube format. It is RoHS compliant and suitable for high-power applications.
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Technical Specifications
Onsemi FJA4310YTU technical specifications.
General
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 140V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 90 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | FJA4310 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA4310YTU Datasheet
Download the complete datasheet for Onsemi FJA4310YTU to view detailed technical specifications.
No datasheet is available for this part.