The FJP5027RHTU is a TO-220-3 packaged NPN transistor from Onsemi. It features a collector-emitter breakdown voltage of 800V and a maximum collector current of 3A. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 50W. The transistor's transition frequency is 15MHz, making it suitable for high-frequency applications.
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Onsemi FJP5027RHTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 15MHz |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Transition Frequency | 15MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJP5027RHTU to view detailed technical specifications.
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