The FJPF5021RTU is a TO-220-3 packaged NPN transistor from Onsemi with a collector base voltage rating of 800V and a maximum collector current of 5A. It has a maximum power dissipation of 40W and operates over a temperature range of -55°C to 150°C. The transistor features a gain bandwidth product of 15MHz and a minimum current gain of 15. It is RoHS compliant and available in quantities of 1000 in rail or tube packaging.
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Onsemi FJPF5021RTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 15MHz |
| hFE Min | 15 |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJPF5021RTU to view detailed technical specifications.
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