The FJV92MTF is a PNP transistor from Onsemi with a collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA. It has a maximum power dissipation of 350mW and a gain bandwidth product of 50MHz. The transistor is packaged in a surface mount SOT-23-3 package and is RoHS compliant. It operates over a temperature range and is suitable for use in a variety of applications.
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Onsemi FJV92MTF technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Max Collector Current | 500mA |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 18000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJV92MTF to view detailed technical specifications.
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