The FJX2907ATF_Q is a PNP transistor from Onsemi, packaged in the SOT-323 case. It can withstand a collector-emitter voltage of up to -60V and a collector base voltage of up to -60V. The device has a minimum current gain of 100 and a gain bandwidth product of 200MHz. It can handle a maximum collector current of 600mA and a maximum power dissipation of 325mW. The transistor is rated for operation up to 150°C.
PackageSOT-323
PolarityPNP
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Technical Specifications
Onsemi FJX2907ATF_Q technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | -60V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 325mW |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | FJX2907A |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJX2907ATF_Q Datasheet
Download the complete datasheet for Onsemi FJX2907ATF_Q to view detailed technical specifications.
No datasheet is available for this part.