General purpose phototransistor optocoupler featuring a 5kV isolation voltage and 70V collector-emitter breakdown voltage. This 4-pin DIP component offers a 200mV collector-emitter saturation voltage and a 260% current transfer ratio. Designed for through-hole mounting, it operates with a 20mA input current and supports up to 50mA collector current, with a maximum power dissipation of 200mW. The device operates within a temperature range of -55°C to 110°C and is RoHS compliant.
PackageDIP
MountingThrough Hole
Power200mW
Quick Jump:
Technical Specifications
Onsemi FOD817B technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Current Transfer Ratio | 260% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Current | 20mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Isolation Voltage-Max | 5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 2000 |
| Packaging | Box |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.408g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FOD817B Datasheet
Download the complete datasheet for Onsemi FOD817B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
