The FQA8N80_F109 is a high-power N-channel MOSFET from Onsemi, rated for 800V drain to source breakdown voltage and 8.4A continuous drain current. It features a through-hole package and operates over a temperature range of -55°C to 150°C. The device is RoHS compliant and suitable for high-power applications.
MountingThrough Hole
PolarityN-CHANNEL
Power220W
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Technical Specifications
Onsemi FQA8N80_F109 technical specifications.
General
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.2R |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.