The FQB12N20TM is an N-channel power MOSFET from Onsemi, featuring a drain to source breakdown voltage of 200V and a continuous drain current of 11.6A. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 3.13W. The device is packaged in a D2PAK case and is available on tape and reel. However, it is not RoHS compliant.
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| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 280mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| RoHS | Not Compliant |
