The FQD10N20LTF is a single N-channel FET from Onsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 51W and a continuous drain current of 7.6A. The device is packaged in a TO-252-3 package and is lead free. It is RoHS compliant and has a maximum drain to source breakdown voltage of 200V.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.6A |
| Current Rating | 7.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 200V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD10N20LTF to view detailed technical specifications.
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