The FQI90N08TU is a N-CHANNEL Power MOSFET with a Drain to Source Breakdown Voltage of 80V and a Continuous Drain Current of 71A. It has a Drain to Source Resistance of 16mR and a Power Dissipation of 3.75W. The device is packaged in a Rail/Tube format and has a Max Operating Temperature of 175°C and a Min Operating Temperature of -55°C.
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Onsemi FQI90N08TU technical specifications.
General
| Continuous Drain Current (ID) | 71A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16mR |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.