MOSFET 500V N-Ch QFET V2 Series
Onsemi FQP18N50V2_Q technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Turn-Off Delay Time | 95ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
