The FQP2N60C_Q is a TO-220AB packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 2A and a power dissipation of 54W. The device has a drain to source breakdown voltage of 600V and a drain to source resistance of 4.7 ohms. The FQP2N60C_Q has a fall time of 28ns and a turn-off delay time of 24ns.
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Onsemi FQP2N60C_Q technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Turn-Off Delay Time | 24ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
