The FQP2N90_Q is an N-channel power MOSFET from Onsemi, packaged in a TO-220AB case. It can handle a continuous drain current of 2.2A and a drain-to-source breakdown voltage of 900V. The device has a gate-to-source voltage rating of 30V and a power dissipation of 85W. The FQP2N90_Q operates within a temperature range of -55°C to 150°C and is available in rail or tube packaging.
PackageTO-220AB
PolarityN-CHANNEL
Power85W
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Technical Specifications
Onsemi FQP2N90_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 7.2R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP2N90_Q Datasheet
Download the complete datasheet for Onsemi FQP2N90_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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