The FQP3N80C_Q is an N-channel MOSFET from Onsemi with a TO-220AB package and a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 3A and a drain to source breakdown voltage of 800V. The device has a drain to source resistance of 4.8 ohms and a power dissipation of 107W. The FQP3N80C_Q also features a fall time of 32ns and a turn-off delay time of 22.5ns.
PackageTO-220AB
PolarityN-CHANNEL
Power107W
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Technical Specifications
Onsemi FQP3N80C_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 4.8R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Turn-Off Delay Time | 22.5ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP3N80C_Q Datasheet
Download the complete datasheet for Onsemi FQP3N80C_Q to view detailed technical specifications.
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