The FQP4N80_Q is an N-channel power MOSFET with a drain to source breakdown voltage of 800V and a continuous drain current of 3.9A. It features a drain to source resistance of 3.6R and a gate to source voltage of 30V. The device is packaged in a TO-220AB package and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The FQP4N80_Q is suitable for high-power applications and is available in rail or tube packaging.
PackageTO-220AB
PolarityN-CHANNEL
Power130W
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Technical Specifications
Onsemi FQP4N80_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.6R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP4N80_Q Datasheet
Download the complete datasheet for Onsemi FQP4N80_Q to view detailed technical specifications.
No datasheet is available for this part.