
MOSFET 800V N-Ch Q-FET advance C-Series
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| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 59W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 65ns |
| RoHS | Not Compliant |