The FSB619_Q NPN transistor from Onsemi features a collector base voltage of 50V and a continuous collector current of 2A. It has a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in tape and reel quantities of 3000 and has a gain bandwidth product of 100MHz.
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Technical Specifications
Onsemi FSB619_Q technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 50V |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Series | FSB619 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FSB619_Q Datasheet
Download the complete datasheet for Onsemi FSB619_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.