The FW349-TL-E is a dual-channel FET from Onsemi, featuring a maximum drain to source voltage of 45V and continuous drain current of 4.5A. It has a maximum power dissipation of 1.8W and an on-resistance of 37 milliohms. The device is packaged in a surface mount SOIC package, suitable for automated assembly. Operating temperature range is not specified.
PackageSOIC
MountingSurface Mount
Power2.2W
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Technical Specifications
Onsemi FW349-TL-E technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 45V |
| FET Type | N and P-Channel |
| Input Capacitance | 860pF |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.2W |
| Rds On Max | 37mR |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FW349-TL-E Datasheet
Download the complete datasheet for Onsemi FW349-TL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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