The H11A817C3SD_Q is a single channel transistor with a collector emitter saturation voltage of 200mV and a current transfer ratio of 400%. It operates at a maximum collector current of 50mA and a maximum power dissipation of 200mW. The device is packaged in tape and reel quantities of 1000 and is suitable for use in applications with operating temperatures ranging from -55°C to 100°C.
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| Collector Emitter Saturation Voltage | 200mV |
| Current Transfer Ratio | 400% |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Series | H11A817C |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi H11A817C3SD_Q to view detailed technical specifications.
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