PackagePDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Onsemi H11A817CW_NL technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 70V |
| Current Transfer Ratio | 400% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11A817CW_NL Datasheet
Download the complete datasheet for Onsemi H11A817CW_NL to view detailed technical specifications.
No datasheet is available for this part.