General purpose phototransistor output optocoupler in a 6-pin DIP package for through-hole mounting. Features a 5.3kV isolation voltage, 400mV collector-emitter saturation voltage, and a maximum collector current of 50mA. Operates with DC input and offers a 400mV collector-emitter voltage (VCEO). Includes a 5µs fall time and a maximum operating temperature of 100°C. This RoHS compliant component is supplied in bulk packaging.
PackageDIP
MountingThrough Hole
Power260mW
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Technical Specifications
Onsemi H11AG1M technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Fall Time | 5us |
| Forward Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5.3kV |
| Isolation Voltage-Max | 7.5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 260mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 260mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.855g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11AG1M Datasheet
Download the complete datasheet for Onsemi H11AG1M to view detailed technical specifications.
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