General purpose, 1-channel phototransistor output optocoupler in a 6-pin DIP package. Features 400mV collector-emitter voltage (VCEO) and 400mV collector emitter saturation voltage. Offers a 300% current transfer ratio and 7.5kV maximum isolation voltage. Designed for through-hole mounting with a maximum power dissipation of 250mW. Operates across a -40°C to 100°C temperature range and is RoHS compliant.
PackageDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi H11AV1AVM technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 300% |
| Fall Time | 15us |
| Forward Current | 60mA |
| Input Type | DC |
| Isolation Voltage | 5.25kV |
| Isolation Voltage-Max | 7.5kV |
| Lead Free | Lead Free |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.855g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11AV1AVM Datasheet
Download the complete datasheet for Onsemi H11AV1AVM to view detailed technical specifications.
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