The H11AV1M_Q is a DC input Darlington transistor with a collector emitter saturation voltage of 400mV and a maximum power dissipation of 250mW. It is packaged in a PDIP package and available in bulk. The transistor operates over a temperature range of -40°C to 100°C. The device has a current transfer ratio of 300%. It is suitable for use in a variety of applications requiring a high current gain transistor.
PackagePDIP
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Technical Specifications
Onsemi H11AV1M_Q technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Current Transfer Ratio | 300% |
| Input Type | DC |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250mW |
| Packaging | Bulk |
| Series | H11AV1M |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi H11AV1M_Q Datasheet
Download the complete datasheet for Onsemi H11AV1M_Q to view detailed technical specifications.
No datasheet is available for this part.