The HGTP7N60C3D is a power NPN transistor from Onsemi with a collector-emitter breakdown voltage of 600V and a maximum collector current of 14A. It features a TO-220AB package with a maximum power dissipation of 60W and is suitable for through-hole mounting. The transistor operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. It has a turn-on delay time of 8.5ns and a turn-off delay time of 350ns.
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Onsemi HGTP7N60C3D technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Height | 9.02mm |
| Input Type | STANDARD |
| Length | 10.28mm |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 350ns |
| Turn-On Delay Time | 8.5ns |
| Width | 4.57mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HGTP7N60C3D to view detailed technical specifications.
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