The IRFM214BTF_FP001 is a 250V N-CHANNEL power MOSFET with a continuous drain current of 640mA. It features a drain to source breakdown voltage of 250V and a drain to source resistance of 2 ohms. The device is packaged in tape and reel quantities of 4000 and is RoHS compliant. It can handle a power dissipation of up to 2.1W.
Onsemi IRFM214BTF_FP001 technical specifications.
| Continuous Drain Current (ID) | 640mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
