The IRFR214BTM_FP001 is a TO-252 packaged N-channel FET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 2.2A and a drain to source breakdown voltage of 250V. The device has a drain to source resistance of 2 ohms and a power dissipation of 2.5W. The IRFR214BTM_FP001 is RoHS compliant and available in quantities of 2500 per reel.
PackageTO-252
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi IRFR214BTM_FP001 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 2R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFR214BTM_FP001 Datasheet
Download the complete datasheet for Onsemi IRFR214BTM_FP001 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.