The IRFS250BFP001 is a N-CHANNEL MOSFET with a continuous drain current of 21.3A and a drain to source breakdown voltage of 200V. It has a drain to source resistance of 85mR and a gate to source voltage of 30V. The device operates within a temperature range of -55°C to 150°C and has a power dissipation of 90W. It is packaged in a rail/Tube packaging with 30 units per package.
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Onsemi IRFS250BFP001 technical specifications.
| Continuous Drain Current (ID) | 21.3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 85mR |
| Fall Time | 195ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Turn-Off Delay Time | 295ns |
| RoHS | Compliant |
No datasheet is available for this part.
