The IRFS650B_FP001 is a 200V N-CHANNEL MOSFET with a continuous drain current of 15.8A and a power dissipation of 50W. It has a drain to source breakdown voltage of 200V and a drain to source resistance of 85mR. The device operates over a temperature range of -55°C to 150°C and is packaged in a rail/tube format with 50 units per package. The IRFS650B_FP001 is RoHS compliant.
PolarityN-CHANNEL
Power50W
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Technical Specifications
Onsemi IRFS650B_FP001 technical specifications.
General
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 85mR |
| Fall Time | 195ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 295ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFS650B_FP001 Datasheet
Download the complete datasheet for Onsemi IRFS650B_FP001 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.