The IRLR120ATM is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 8.4A and a drain to source breakdown voltage of 100V. The device is packaged in a TO-252 package and is RoHS compliant. It has a power dissipation of 35W and a gate to source voltage of 20V.
PackageTO-252
PolarityN-CHANNEL
Power35W
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Technical Specifications
Onsemi IRLR120ATM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 220mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLR120ATM Datasheet
Download the complete datasheet for Onsemi IRLR120ATM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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