The IRLR120ATM is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 8.4A and a drain to source breakdown voltage of 100V. The device is packaged in a TO-252 package and is RoHS compliant. It has a power dissipation of 35W and a gate to source voltage of 20V.
PackageTO-252
PolarityN-CHANNEL
Power35W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi IRLR120ATM datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi IRLR120ATM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 220mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLR120ATM Datasheet
Download the complete datasheet for Onsemi IRLR120ATM to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
