MOSFET 200V N-Channel a-FET Logic Level
Onsemi IRLR220ATM technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| RoHS | Compliant |
No datasheet is available for this part.
