The IRLW540ATM is a N-CHANNEL Power MOSFET from Onsemi, featuring a breakdown voltage of 100V and a continuous drain current of 28A. It has a drain to source resistance of 52mR and a power dissipation of 3.8W. The device is packaged in a D2PAK and is available in tape and reel packaging. It operates over a temperature range of -55°C to 175°C, but is not RoHS compliant.
PackageD2PAK
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
Onsemi IRLW540ATM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi IRLW540ATM Datasheet
Download the complete datasheet for Onsemi IRLW540ATM to view detailed technical specifications.
No datasheet is available for this part.