The J174_Q P-Channel JFET features a -30V drain to source breakdown voltage and a 30V gate to source voltage. It can handle a continuous drain current of -100mA and has a maximum power dissipation of 350mW. The device is packaged in a TO-92 case and is available in bulk packaging.
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| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -100mA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 85R |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 30V |
| Max Power Dissipation | 350mW |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Series | J174 |
| RoHS | Compliant |
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