The J309_Q N-Channel JFET transistor features a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 625mW. It has a drain to source breakdown voltage of 25V and a gate to source voltage of -25V. The transistor is packaged in a TO-92 case and is available in bulk packaging. It is suitable for use in a variety of applications where a low-power, high-input-impedance device is required.
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| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 30mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Series | J309 |
| RoHS | Not Compliant |
