The KSB707OTU is a PNP transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 7A. It is packaged in a TO-220-3 package and is designed for through-hole mounting. The transistor has a maximum power dissipation of 1.5W and operates over a temperature range of -55°C to 150°C. The device is RoHS compliant and is available in quantities of 1000 in rail or tube packaging.
PackageTO-220-3
MountingThrough Hole
PolarityPNP
Power1.5W
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Technical Specifications
Onsemi KSB707OTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 40 |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB707OTU Datasheet
Download the complete datasheet for Onsemi KSB707OTU to view detailed technical specifications.
No datasheet is available for this part.