The KSB708YTU PNP transistor is packaged in a TO-220-3 case and is suitable for through-hole mounting. It has a collector-emitter breakdown voltage of 80V and a maximum collector current of 7A. The device can operate within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. The transistor is RoHS compliant and is available in quantities of 1000 per package.
PackageTO-220-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSB708YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 40 |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB708YTU Datasheet
Download the complete datasheet for Onsemi KSB708YTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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