
The KSC1008YTA_Q is an NPN transistor from Onsemi with a maximum collector-emitter voltage of 60V and a maximum collector current of 700mA. It features a gain bandwidth product of 50MHz and a minimum current gain of 120. The transistor is packaged in a TO-92 case and is available in an ammo pack. It can operate over a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW.
Onsemi KSC1008YTA_Q technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 60V |
| Emitter Base Voltage (VEBO) | 8V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 120 |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Series | KSC1008 |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi KSC1008YTA_Q to view detailed technical specifications.
No datasheet is available for this part.
