Bipolar Transistors - BJT NPN Epitaxial Transistor
PolarityNPN
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Technical Specifications
Onsemi KSD1020GTA_Q technical specifications.
General
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 25V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 170MHz |
| hFE Min | 200 |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Series | KSD1020 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSD1020GTA_Q Datasheet
Download the complete datasheet for Onsemi KSD1020GTA_Q to view detailed technical specifications.
No datasheet is available for this part.