NPN Epitaxial Silicon Transistor, TO-92-3 package, featuring a 60V Collector Emitter Voltage (VCEO) and 1A Max Collector Current. This bipolar junction transistor offers a 160MHz transition frequency and a minimum hFE of 135. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 750mW. The component is RoHS compliant and supplied in an Ammo Pack with a package quantity of 2000.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 135 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 60V |
| Weight | 0.24g |
| RoHS | Compliant |
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