The KSD880OPATU is a TO-220-3 packaged NPN transistor from Onsemi with a collector-emitter breakdown voltage of 60V and a maximum collector current of 3A. It has a maximum power dissipation of 30W and operates over a temperature range of -55°C to 150°C. The transistor features a gain bandwidth product of 3MHz and a minimum current gain of 60. It is available in a through-hole mount configuration and is RoHS compliant.
Frequency3MHz
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD880OPATU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 60 |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD880OPATU Datasheet
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