The KSK595HMTF_Q is an N-channel JFET transistor with a drain to source breakdown voltage of -20V and a gate to source voltage of -600mV. It has a maximum power dissipation of 100mW and is packaged in a SOT-23 package. The transistor is available in quantities of 15000 per reel. It is suitable for use in a variety of applications where a low power, low voltage transistor is required. The operating temperature range is not specified in the provided data.
PackageSOT-23
PolarityN-CHANNEL
Power100mW
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Technical Specifications
Onsemi KSK595HMTF_Q technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | -600mV |
| Max Power Dissipation | 100mW |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100mW |
| Series | KSK595 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSK595HMTF_Q Datasheet
Download the complete datasheet for Onsemi KSK595HMTF_Q to view detailed technical specifications.
No datasheet is available for this part.