The MCT61W is a dual PNP transistor in a PDIP package, suitable for through-hole mounting. It has a collector-emitter saturation voltage of 400mV and a maximum collector current of 30mA. The device can handle a maximum power dissipation of 400mW and operates within a temperature range of -55°C to 100°C. The MCT61W is RoHS compliant and available in quantities of 1000 units per rail or tube packaging.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Onsemi MCT61W technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Input Type | DC |
| Isolation Voltage | 5.3kV |
| Max Collector Current | 30mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Channels | 2 |
| Number of Circuits | 2 |
| Output Current per Channel | 30mA |
| Output Voltage | 30V |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | MCT61 |
| Weight | 0.882g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MCT61W Datasheet
Download the complete datasheet for Onsemi MCT61W to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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