The MPSA12_D75Z is a single NPN transistor from Onsemi with a TO-92-3 package and through hole mount. It can handle a collector-emitter voltage of up to 20V and a collector current of up to 1.2A. The transistor has a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C. It features a high current gain of 20,000 and is suitable for general-purpose applications.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
Power625mW
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Technical Specifications
Onsemi MPSA12_D75Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 1.2A |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA12_D75Z Datasheet
Download the complete datasheet for Onsemi MPSA12_D75Z to view detailed technical specifications.
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