This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 170 A continuous drain current. It is housed in a TO-263 package and features 2.5 mΩ typical on-resistance at 10 V gate drive. Typical input capacitance is 15800 pF, total gate charge is 280 nC, and junction-to-case thermal resistance is 1.39 °C/W. The device supports 600 A pulsed drain current, 90 W power dissipation at Tc = 25 °C, and operation up to 150 °C junction temperature.
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Onsemi NDBA170N06A technical specifications.
| Drain to Source Voltage | 60V |
| Gate to Source Voltage | ±20V |
| Drain Current (DC) | 170A |
| Drain Current (DC), Package Limited | 100A |
| Drain Current (Pulse) | 600A |
| Power Dissipation | 90W |
| Junction Temperature | 150°C |
| Storage Temperature | -55 to +150°C |
| Avalanche Energy | 571mJ |
| Avalanche Current | 70A |
| Thermal Resistance, Junction-to-Case | 1.39°C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5°C/W |
| Gate Threshold Voltage | 1.2 to 2.6V |
| On-Resistance RDS(on) | 2.5 typ, 3.3 maxmΩ |
| Input Capacitance | 15800pF |
| Output Capacitance | 1000pF |
| Reverse Transfer Capacitance | 740pF |
| Total Gate Charge | 280nC |
| Reverse Recovery Time | 100ns |
| Reverse Recovery Charge | 310nC |
