N-channel MOSFET with 500V drain-source breakdown voltage and 3A continuous drain current. Features 2.7 Ohm drain-source resistance (Rds On Max) and 61W maximum power dissipation. Packaged in TO-251-3 (IPAK) with dimensions of 7.62mm height, 6.73mm length, and 2.38mm width. Offers fast switching speeds with turn-on delay of 9ns and fall time of 10ns. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-251-3
PolarityN-CHANNEL
Power61W
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Technical Specifications
Onsemi NDD04N50Z-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.62mm |
| Input Capacitance | 308pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 61W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD04N50Z-1G Datasheet
Download the complete datasheet for Onsemi NDD04N50Z-1G to view detailed technical specifications.
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