N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.1A continuous drain current. Offers a maximum drain-source on-resistance of 2 Ohms. Designed with a TO-251-3 package for insertion mounting, this single element transistor boasts a 150°C maximum operating temperature and 83W power dissipation. Includes fast switching characteristics with turn-on delay time of 13ns and fall time of 15ns. RoHS compliant and lead-free.
PackageTO-251-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Onsemi NDD04N60Z-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.35mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 13ns |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD04N60Z-1G Datasheet
Download the complete datasheet for Onsemi NDD04N60Z-1G to view detailed technical specifications.
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