MOSFET Dual P-Ch FET Enhancement Mode
Onsemi NDH8304P_Q technical specifications.
| Continuous Drain Current (ID) | -2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 61mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Turn-Off Delay Time | 78ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
